Webfmw60n190s2hf.pdf Size:231K _inchange_semiconductor. isc N-Channel MOSFET Transistor FMW60N190S2HFFEATURESWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching … WebThe store will not work correctly in the case when cookies are disabled.
FMW6 Datasheet, Equivalent, Cross Reference Search
WebMarking Code: 037N08N Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 41 W Maximum Drain-Source Voltage Vds : 80 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs(th) : 3.5 V Maximum Drain Current Id : 75 A Maximum Junction Temperature (Tj): 175 °C WebIntegrated input filter X-capacitor discharge function decreases loss due to discharge resistance. Low consumption current, 0.80mA (Vcc quiescent current). Integrated high-side and low-side drive circuits, which can be directly connected to the power MOSFET and operates with 50% duty cycle. easy crockpot chicken gnocchi soup
IPA045N10N3 MOSFET. Datasheet pdf. Equivalent
WebSpec. No. : C745H8 Issued Date : 2024.02.17 Revised Date : Page No. 1/ 11 Dual N-Channel Enhancement Mode Power MOSFET Features. Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package WebFMW60N190S2HF-S31PP-P2 Fuji Electric Co Ltd application FMW60N190S2HF-S31PP-P2 Fuji Electric Co Ltd distributor Customers Also Bought (You May Also Be Interested In) Click to View Pricing, Inventory, Delivery & Lifecycle Information: F-290X FW-07-05-L-D-305-100 FXE10-10M90Y FX12D5-5M90Y Webfmw60n190s2hf ipw60r180p7 ipw60r180c7 - fmw79n60s1fdhf - - ipw60r040cfd7 fmw79n60s1hf ipw60r037p7 ipw60r040c7 - fuji semiconductor 600 v coolmos™ p7 600 v … cupwebalp2000 s orsola malpighi